Plessey Acquires GaN-on-Si LED Technology

Plessey Semiconductor Ltd. (UK) Limited has acquired CamGaN, a University of Cambridge spin-out with novel gallium nitride (GaN) technology for high-brightness light-emitting diodes (HB-LEDs) fabricated on large-area silicon substrates. Plessey will move the technology to its 6 "wafer processing facility in Plymouth, UK to produce GaN-on-Si HB-LEDs.
The newly acquired Plessey HB panel lighting 12w/18w/24w/36w Enables the growth of thin HB LED structures on standard, Readily available silicon substrates. Current technologies use silicon carbide (SiC) or sapphire substrates, que are expensive and difficult to scale-up. Plessey's GaN-on-silicon solution offers cost Reductions of the order of 80% Compared to 60*60 panel light 27w/30w/36w/48w/54w/60w/72w grown on SiC or sapphire by Reducing reject rates, Minimizing batch time, and utilizing automated semiconductor processing equipment. These cost will be Reductions Achieved while Enabling outputs in excess of 150 lumens per watt - a combination That will allow Plessey to offer The most cost effective solutions in the HB LED industry.
Michael LeGoff, Plessey's Managing Director Stated, "HB LED lighting dealer to the future of domestic, architectural, medical and automotive lighting. Achieving the goals of high efficiency and brightness is key to the rapid deployment of energy saving, solid state lighting. This new British technology cost and performance advantages Provides That will Constitute a game-changing step forward towards the replacement of incandescent and fluorescent bulbs with HB LED lamps. "

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